p6smb series vishay general semiconductor document number: 88370 revision: 21-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount t rans z orb ? transient voltage suppressors features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-directional and bi-directional ? 600 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by in ductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial and telecommunication. mechanical data case: do-214aa (smb) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade base p/nhe3 - rohs co mpliant, high reliability/ automotive grade (aec q101 qualified) terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types devices for bi-direction applications for bi-directional devices use ca suffix (e.g. p6smb10ca). electrical characteristics apply in both directions. primary characteristics v br uni-directional 6.8 v to 540 v v br bi-directional 6.8 v to 220 v p ppm 600 w p d 5.0 w i fsm (uni-directional only) 100 a t j max. 150 c do-214aa (smb) notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak power dissipation with a 10/1000 s waveform (1)(2) (fig. 1) p ppm 600 w peak pulse current with a 10/1000 s waveform (1) i ppm see next table a power dissipation on in finite heatsink t a = 50 c , p d 5.0 w peak forward surge current 8.3 ms si ngle half sine-wave uni-directional only (2) i fsm 100 a operating junction and storage temperature range t j , t stg - 65 to + 150 c
p6smb series vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88370 revision: 21-oct-08 2 notes: (1) pulse test: t p 50 ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) for bi-directional types with v wm of 10 v and less, the i d limit is doubled (4) all terms and symbols are consistent with ansi/ieee c62.35 (5) v f = 3 v at i f = 50 a (uni-directional only) electrical characteristics (t a = 25 c unless otherwise noted) general semiconductor part number device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (3) (a) maximum peak pulse current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temp. coefficient of v br (%/c) uni bi min. max. p6smb6.8a 6v8a 6v8c 6.45 7.14 10 5.80 1000 57.1 10.5 0.057 p6smb7.5a 7v5a 7v5c 7.13 7.88 10 6.40 500 53.1 11.3 0.061 p6smb8.2a 8v2a 8v2c 7.79 8.61 10 7.02 200 49.6 12.1 0.065 p6smb9.1a 9v1a 9v1c 8.65 9.55 1.0 7.78 50 44.8 13.4 0.068 p6smb10a 10a 10c 9.50 10.5 1.0 8.55 10 41.4 14.5 0.073 p6smb11a 11a 11c 10.5 11.6 1.0 9.40 5.0 38.5 15.6 0.075 p6smb12a 12a 12c 11.4 12.6 1.0 10.2 5.0 35.9 16.7 0.078 p6smb13a 13a 13c 12.4 13.7 1.0 11.1 5.0 33.0 18.2 0.081 p6smb15a 15a 15c 14.3 15.8 1.0 12.8 1.0 28.3 21.2 0.084 p6smb16a 16a 16c 15.2 16.8 1.0 13.6 1.0 26.7 22.5 0.086 p6smb18a 18a 18c 17.1 18.9 1.0 15.3 1.0 23.8 25.2 0.088 p6smb20a 20a 20c 19.0 21.0 1.0 17.1 1.0 21.7 27.7 0.090 p6smb22a 22a 22c 20.9 23.1 1.0 18.8 1.0 19.6 30.6 0.092 p6smb24a 24a 24c 22.8 25.2 1.0 20.5 1.0 18.1 33.2 0.094 p6smb27a 27a 27c 25.7 28.4 1.0 23.1 1.0 16.0 37.5 0.096 p6smb30a 30a 30c 28.5 31.5 1.0 25.6 1.0 14.5 41.4 0.097 p6smb33a 33a 33c 31.4 34.7 1.0 28.2 1.0 13.1 45.7 0.098 p6smb36a 36a 36c 34.2 37.8 1.0 30.8 1.0 12.0 49.9 0.099 p6smb39a 39a 39c 37.1 41.0 1.0 33.3 1.0 11.1 53.9 0.100 p6smb43a 43a 43c 40.9 45.2 1.0 36.8 1.0 10.1 59.3 0.101 p6smb47a 47a 47c 44.7 49.4 1.0 40.2 1.0 9.3 64.8 0.101 p6smb51a 51a 51c 48.5 53.6 1.0 43.6 1.0 8.6 70.1 0.102 p6smb56a 56a 56c 53.2 58.8 1.0 47.8 1.0 7.8 77.0 0.103 p6smb62a 62a 62c 58.9 65.1 1.0 53.0 1.0 7.1 85.0 0.104 P6SMB68A 68a 68c 64.6 71.4 1.0 58.1 1.0 6.5 92.0 0.104 p6smb75a 75a 75c 71.3 78.8 1.0 64.1 1.0 5.8 103 0.105 p6smb82a 82a 82c 77.9 86.1 1.0 70.1 1.0 5.3 113 0.105 p6smb91a 91a 91c 86.5 95.5 1.0 77.8 1.0 4.8 125 0.106 p6smb100a 100a 100c 95.0 105 1.0 85.5 1.0 4.4 137 0.106 p6smb110a 110a 110c 105 116 1.0 94.0 1.0 3.9 152 0.107 p6smb120a 120a 120c 114 126 1.0 102 1.0 3.6 165 0.107 p6smb130a 130a 130c 124 137 1.0 111 1.0 3.4 179 0.107 p6smb150a 150a 150c 143 158 1.0 128 1.0 2.9 207 0.108 p6smb160a 160a 160c 152 168 1.0 136 1.0 2.7 219 0.108 p6smb170a 170a 170c 162 179 1.0 145 1.0 2.6 234 0.108 p6smb180a 180a 180c 171 189 1.0 154 1.0 2.4 246 0.108 p6smb200a 200a 200c 190 210 1.0 171 1.0 2.2 274 0.108 p6smb220a 220a 220c 209 231 1.0 185 1.0 1.8 328 0.108 p6smb250a 250a - 237 263 1.0 214 1.0 1.74 344 0.110 p6smb300a 300a - 285 315 1.0 256 1.0 1.45 414 0.110 p6smb350a 350a - 333 368 1.0 300 1.0 1.24 482 0.110 p6smb400a 400a - 380 420 1.0 342 1.0 1.10 548 0.110 p6smb440a 440a - 418 462 1.0 376 1.0 1.00 602 0.110 p6smb480a 480a - 456 504 1.0 408 1.0 0.91 658 0.110 p6smb510a 510a - 485 535 1.0 434 1.0 0.86 698 0.110 p6smb540a 540a - 513 567 1.0 459 1.0 0.81 740 0.110
p6smb series vishay general semiconductor document number: 88370 revision: 21-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 note: (1) mounted on minimum recommended pad layout note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit thermal resistance, junction to ambient air (1) r ja 100 c/w thermal resistance, junction to leads r jl 20 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode p6smb6.8a-e3/52 0.096 52 750 7" di ameter plastic tape and reel p6smb6.8a-e3/5b 0.096 5b 3200 13" di ameter plastic tape and reel p6smb6.8ahe3/52 (1) 0.096 52 750 7" diameter plastic tape and reel p6smb6.8ahe3/5b (1) 0.096 5b 3200 13" diameter plastic tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 100 10 1 0.1 p ppm - peak p u lse po w er (k w ) t d - p u lse w idth (s) 0 255075100 100 75 50 25 0 125 150 175 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical junction capacitance 0 50 100 150 t d 0 1.0 2.0 3.0 4.0 i ppm - peak p u lse c u rrent, % i rsm t - time (ms) t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 s w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 10 1 100 200 uni-directional bi-directional 6000 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at zero bias v r , meas u red at stand-off v oltage v w m c j - j u nction capacitance (pf) v w m - re v erse stand-off v oltage ( v )
p6smb series vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88370 revision: 21-oct-08 4 package outline dimensions in inches (millimeters) figure 5. typical transi ent thermal impedance 0.1 1.0 10 100 0.001 0.01 0.1 1 10 100 1000 t p - p u lse d u ration (s) transient thermal impedance (c/ w ) figure 6. maximum non-repetitive peak forward surge current 10 200 100 1 100 10 8 .3 ms single half sine- w a v e uni-directional only nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) mountin g pad layout 0.0 8 5 (2.159) max. 0.0 8 6 (2.1 8 ) mi n . 0.060 (1.52) mi n . 0.220 ref. do-214aa (smb) cathode band 0.155 (3.94) 0.130 (3.30) 0.012 (0.305) 0.006 (0.152) 0.00 8 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.0 8 4 (2.13) 0.1 8 0 (4.57) 0.160 (4.06) 0.0 8 6 (2.20) 0.077 (1.95)
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